CMP Glossary

Abrasive

Particles that contribute to contact-mediated removal; their surface chemistry can also be relevant. Context →

Agglomerate

A cluster of associated particles, often more weakly bound than an aggregate. Define the characterization method. Context →

Aggregate

A strongly associated or fused particle structure. Aggregate size can differ from primary-particle size. Context →

Alumina

Aluminum oxide (Al₂O₃), an abrasive discussed in material-specific CMP systems. Context →

Barrier / liner

A film serving an integration function such as limiting diffusion or supporting adhesion. Specify the actual material rather than relying on the role name. Context →

Ceria

Cerium oxide (CeO₂), an abrasive with surface interactions important to oxide CMP. Context →

Certificate of analysis (COA)

A lot-associated document reporting agreed product-release information. It does not prove every wafer-process response. Context →

Chelating agent

A ligand capable of binding a metal ion through multiple binding sites; a subset of complexing agents. Context →

Chemical Mechanical Planarization

CMP terminology emphasizing reduction of surface topography. Context →

Chemical Mechanical Polishing

CMP terminology describing the combined chemical and mechanical polishing process. Context →

CMP

Abbreviation for Chemical Mechanical Planarization or Chemical Mechanical Polishing, depending on context. Context →

Colloidal silica

Silica particles dispersed in a liquid colloidal system; the product specification should define size and stability. Context →

Complexing agent

An additive that binds dissolved species such as metal ions and can affect chemical equilibria and removal. Context →

Corrosion

Unintended chemical or electrochemical degradation or loss of a material in the process environment. Context →

Defectivity

Defect occurrence or density under a stated inspection and classification protocol. Context →

Dielectric

An electrically insulating material. CMP behavior depends on the specific film and its properties. Context →

Dishing

Recession within a patterned feature relative to a specified local reference surface. Context →

Dispersant

An additive used to help keep particles distributed; it can also affect surface interactions. Context →

Erosion

Pattern-region loss relative to an agreed reference, involving the combined response of layout and films. Context →

Fumed silica

Silica produced by a high-temperature route, with primary structures that can form fused aggregates. Context →

Galvanic interaction

Electrochemical interaction between electrically connected dissimilar materials exposed to a conductive liquid. Context →

Inhibitor

An additive that suppresses a reaction or loss, often through adsorption or protective surface species. Context →

Large particle count (LPC)

A count of particles above defined size thresholds using a stated method and sample protocol. Context →

Material removal rate (MRR)

Material thickness removed per unit effective polish time under a specified protocol. Context →

Oxidizer

A chemical species that promotes oxidation; its effect is product-, material- and condition-dependent. Context →

Passivation

Formation or maintenance of a surface state that restricts reaction or removal under certain conditions. Context →

Point of use (POU)

The product state and sampling location associated with delivery to the polishing process; specify it precisely. Context →

Post-CMP cleaning

The cleaning sequence following polish to remove residues and contamination while protecting the surface. Context →

Recess

Loss of retained material height in a feature relative to a specified reference. Context →

Selectivity

Ratio of removal rates for explicitly named films under matched conditions. Context →

Slurry

A liquid containing dispersed solid particles; CMP usage also emphasizes its functional chemistry. Context →

STI

Shallow trench isolation, a device-isolation context with specific patterned-film and stopping requirements. Context →

Surfactant

A surface-active additive that can affect wetting, adsorption and other interfacial behavior. Context →

WIWNU

Within-wafer non-uniformity. State the formula, measurement map and edge exclusion when reporting it. Context →

Zeta potential

An electrokinetic measure associated with the particle–liquid interface under stated conditions; not a universal stability guarantee. Context →

Rate, uniformity, particle size, defect count and selectivity can appear precise while being incompletely defined. Keep units, method, sample state and acceptance convention with a reported value. The linked guides give the relevant comparison questions.